Autori: Abood Imhimmad
| Naslov | Surrounding gate long channel nanowire MOSFET modelling-extended analysis (Article; Proceedings Paper) |
| Autori | Ostojic Stanko M Sasic Rajko M Lukic Petar M  Abood Imhimmad
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| Info | PHYSICA SCRIPTA, (2014), vol. 89 br. 11, str. - |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy (Article) |
| Autori | Abood Imhimmad Sasic Rajko M Ostojic Stanko M Lukic Petar M
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| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2013), vol. 52 br. 9, str. - |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia [45003] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance (Article) |
| Autori | Abood Imhimmad Lukic Petar M Sasic Rajko M Alkoash Abed Alkhem Ostojic Stanko M
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| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2013), vol. 7 br. 5-6, str. 329-333 |
| Projekat | Ministry of Science and Technological Development, Goverment of the Republic of Serbia [45003] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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